STB8NM60T4
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Краткое описание:
650V 8A N-CH MOSFET D2PAK 0.9 Ohm
Дополнительная информация
N-channel MOSFET featuring 650V drain-source breakdown voltage and 8A continuous drain current. Offers a low 0.9 Ohm drain-source on-resistance at a nominal gate-source voltage of 4V. Designed for surface mounting in a D2PAK package, this component boasts a maximum power dissipation of 100W and fast switching speeds with typical turn-on delay of 14ns and fall time of 10ns. RoHS compliant and operating across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1R |
| Nominal Vgs | 4V |
| Package/Case | D2PAK |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 1000 |
| Input Capacitance | 400pF |
| Power Dissipation | 100W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 900mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 1R |
| Drain to Source Breakdown Voltage | 600V |
