STB9NK70Z-1

Снят с производства
STB9NK70Z-1 - Stmicroelectronics
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Краткое описание: 700V 7.5A 1.2R N-CH Power MOSFET TO-262-3
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-CHANNEL POWER MOSFET featuring 700V drain-source breakdown voltage and 7.5A continuous drain current. Offers 1.2Ω maximum drain-source resistance (Rds On) and 115W maximum power dissipation. Designed for through-hole mounting in a TO-262-3 package, this RoHS compliant component exhibits a 3.75V threshold voltage and fast switching times with a 22ns turn-on delay and 13ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 10.75mm
Length 10.4mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 13ns
Packaging Rail/Tube
Rds On Max 1.2R
Package/Case TO-262-3
RoHS Compliant Yes
Input Capacitance 1.37nF
Power Dissipation 115W
Threshold Voltage 3.75V
Turn-On Delay Time 22ns
Radiation Hardening No
Turn-Off Delay Time 45ns
Reach SVHC Compliant No
Max Power Dissipation 115W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.2R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 7.5A
Drain to Source Voltage (Vdss) 700V
Drain to Source Breakdown Voltage 700V

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