STD100NH03LT4
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60A, 30V N-CH MOSFET, DPAK, 5.5mR, 100W
Дополнительная информация
N-channel power MOSFET featuring 30V drain-source breakdown voltage and 60A continuous drain current. Surface mountable in a DPAK package, this component offers a low 5.5mΩ Rds On resistance. Operating across a wide temperature range from -55°C to 175°C, it supports up to 100W power dissipation. Key switching characteristics include a 16ns turn-on delay and 23ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ III |
| Polarity | N-CHANNEL |
| Fall Time | 23ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5.5mR |
| Package/Case | DPAK |
| Current Rating | 60A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 2500 |
| Input Capacitance | 4.1nF |
| Power Dissipation | 100W |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 48ns |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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