STD10NM65N
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Краткое описание:
650V 9A N-CH MOSFET DPAK 480mR
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 9A continuous drain current. Offers 480mΩ maximum drain-source on-resistance and 90W power dissipation. Designed for surface mounting in a DPAK package, this component boasts fast switching characteristics with typical turn-on delay of 12ns and fall time of 20ns. Operating temperature range from -55°C to 150°C, with RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 480mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 850pF |
| Power Dissipation | 90W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 480mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 480mR |
| Drain to Source Breakdown Voltage | 650V |
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