STD10PF06-1
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Краткое описание:
60V P-CH MOSFET, 10A, 200mR, TO-251AA
Дополнительная информация
P-CHANNEL Power MOSFET featuring 60V drain-source breakdown voltage and 10A continuous drain current. Offers a low 200mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-251-3 (IPAK-3) package, with a maximum power dissipation of 40W. Operates across a wide temperature range from -65°C to 175°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.2mm |
| Length | 6.6mm |
| Series | STripFET™ II |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 200mR |
| Package/Case | TO-251-3 |
| Current Rating | -10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 75 |
| Input Capacitance | 850pF |
| Power Dissipation | 40W |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 40W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
| Drain to Source Breakdown Voltage | -60V |
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