STD10PF06T4
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Краткое описание:
P-Channel 60V 10A 180mR MOSFET DPAK
Дополнительная информация
P-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 10A continuous drain current. Offers low 180mΩ drain-source on-resistance at a nominal Vgs of -4V. Designed for surface mount applications in a DPAK package, this component operates from -65°C to 175°C with a maximum power dissipation of 40W. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 10ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 200mR |
| Nominal Vgs | -4V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| Current Rating | -10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1 |
| Input Capacitance | 850pF |
| Power Dissipation | 40W |
| Threshold Voltage | -4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Dual Supply Voltage | -60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 40W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
| Drain to Source Breakdown Voltage | -60V |
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