STD11NM50N
Производится
Увеличить
Краткое описание:
500V N-CH MOSFET, 8.5A, 470mR Rds On, DPAK
Дополнительная информация
N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 8.5A continuous drain current. Offers 470mΩ maximum drain-source on-resistance. Designed for surface mounting in a DPAK package, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 70W. Key switching characteristics include an 8ns turn-on delay and a 10ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 470mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Input Capacitance | 547pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 33ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 470mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 470mR |
| Drain to Source Breakdown Voltage | 500V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
