STD11NM65N
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Краткое описание:
650V 11A N-CH Power MOSFET DPAK TO-252
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source voltage and 11A continuous drain current. This surface-mount device utilizes MDmesh process technology and is housed in a TO-252AA DPAK package with 3 pins and a tab. Key specifications include a maximum gate-source voltage of ±25V, a 4V gate threshold voltage, and a low 455mOhm drain-source resistance at 10V. The DPAK package offers a 6.6mm max length, 6.2mm max width, and 2.4mm max height, with a 2.3mm max pin pitch.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.3(Max) |
| Package Material | Plastic |
| Package Width (mm) | 6.2(Max) |
| Process Technology | MDmesh |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.4(Max) |
| Package Length (mm) | 6.6(Max) |
| Seated Plane Height (mm) | 2.63(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 110000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 29nC |
| Typical Gate Charge @ Vgs | 29@10VnC |
| Maximum Gate Source Voltage | ±25V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 650V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 455@10VmOhm |
| Typical Input Capacitance @ Vds | 800@50VpF |
| Maximum Continuous Drain Current | 11A |
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