STD12N65M5
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Краткое описание:
650V 8.5A N-CH MOSFET, 430mR, DPAK, TO-252
Дополнительная информация
N-channel power MOSFET, DPAK package, featuring 650V drain-source breakdown voltage and 8.5A continuous drain current. Offers a low 430mΩ maximum drain-source on-resistance. Operates with a 4V threshold voltage and 25V gate-source voltage. Includes fast switching characteristics with turn-on delay of 22.6ns and fall time of 24ns. Maximum power dissipation is 70W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 24ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 430mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 900pF |
| Power Dissipation | 70W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 22.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15.6ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 430mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 430mR |
| Drain to Source Breakdown Voltage | 650V |
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