STD12NF06LT4
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Краткое описание:
N-Ch MOSFET, 60V, 12A, 100mR, DPAK, SMT
Дополнительная информация
Automotive-grade N-channel power MOSFET featuring 60V drain-source breakdown voltage and 12A continuous drain current. This STripFET II device offers a low 0.08 Ohm typical drain-source on-resistance. Packaged in a DPAK surface-mount case, it operates from -55°C to 175°C with 30W maximum power dissipation. Key electrical characteristics include 350pF input capacitance and fast switching times with 10ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Nominal Vgs | 2V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| Current Rating | 12A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 350pF |
| Power Dissipation | 30W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 100mR |
| Drain to Source Breakdown Voltage | 60V |
