STD12NF06T4
Производится
Увеличить
Краткое описание:
N-Ch 60V 12A 100mR DPAK Power MOSFET
Дополнительная информация
N-Channel POWER MOSFET featuring 60V drain-source breakdown voltage and 12A continuous drain current. This surface-mount device offers a low 100mΩ maximum drain-source on-resistance. It operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 30W. The DPAK package facilitates efficient heat management.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Package/Case | DPAK |
| Current Rating | 12A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 2500 |
| Input Capacitance | 315pF |
| Power Dissipation | 30W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 100mR |
| Drain to Source Breakdown Voltage | 60V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
