STD12NM50N
Снят с производства
Краткое описание:
500V 11A N-CH MOSFET, 380mR Rds On, DPAK, Power
Дополнительная информация
N-Channel Power MOSFET, DPAK package, offering 500V drain-source breakdown voltage and 11A continuous drain current. Features low 380mΩ maximum drain-source on-resistance at a nominal 3V gate-source voltage. Designed for surface mounting with a maximum power dissipation of 100W and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 15ns and fall time of 14ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 380mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| Current Rating | 11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 1 |
| Input Capacitance | 940pF |
| Power Dissipation | 1kW |
| Turn-On Delay Time | 15ns |
| Dual Supply Voltage | 500V |
| On-State Resistance | 380mR |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 380mR |
| Drain to Source Breakdown Voltage | 500V |
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