STD150N3LLH6
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Краткое описание:
N-Ch 30V 80A 2.8mR DPAK Power MOSFET
Дополнительная информация
N-channel Power MOSFET featuring 30V drain-source breakdown voltage and a low 2.8mΩ maximum drain-source on-resistance. This surface-mount device offers a continuous drain current of 80A and a maximum power dissipation of 110W. Key switching characteristics include a 17ns turn-on delay and a 46ns fall time. Housed in a DPAK package, it operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 46ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.8mR |
| Nominal Vgs | 2.5V |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.7nF |
| Power Dissipation | 110W |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 2.8mR |
| Drain to Source Breakdown Voltage | 30V |
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