STD17NF25

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STD17NF25 - Stmicroelectronics
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Краткое описание: 250V 17A N-CH MOSFET DPAK 165mR
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 250V drain-source breakdown voltage and 17A continuous drain current. Offers a low 165mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 3V. Designed for surface mounting in a DPAK package, this component boasts a maximum power dissipation of 90W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 8.8ns turn-on delay and an 8.8ns fall time.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 8.8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 165mR
Nominal Vgs 3V
Termination SMD/SMT
Package/Case DPAK
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 1nF
Power Dissipation 90W
Threshold Voltage 3V
Number of Elements 1
Turn-On Delay Time 8.8ns
Dual Supply Voltage 250V
Radiation Hardening No
Turn-Off Delay Time 21ns
Reach SVHC Compliant No
Max Power Dissipation 90W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 165mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 17A
Drain to Source Voltage (Vdss) 250V
Drain-source On Resistance-Max 165mR
Drain to Source Breakdown Voltage 250V

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