STD1NK60T4
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Краткое описание:
600V 1A N-CH MOSFET DPAK 8.5R Rds(on)
Дополнительная информация
N-channel SuperMESH™ Power MOSFET, 600V drain-source breakdown voltage, 1A continuous drain current, and 8.5 Ohm maximum drain-source on-resistance. Features include 6.5ns turn-on delay, 19ns turn-off delay, and 25ns fall time. This surface-mount MOSFET is housed in a DPAK package with a maximum power dissipation of 30W and operates from -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.5R |
| Package/Case | DPAK |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 2500 |
| Input Capacitance | 156pF |
| Power Dissipation | 30W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 8.5R |
| Drain to Source Breakdown Voltage | 600V |
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