STD2NK60Z-1
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Краткое описание:
600V 1.4A N-CH MOSFET, 8R RdsOn, TO-251 Power Transistor
Дополнительная информация
N-CHANNEL Power MOSFET featuring 600V drain-to-source breakdown voltage and 1.4A continuous drain current. This through-hole component offers 8 Ohm drain-to-source resistance (Rds On Max) and 45W power dissipation. Key switching characteristics include 8ns turn-on delay, 22ns turn-off delay, and 25ns fall time. Packaged in a TO-251-3 (IPAK-3) case, it operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.2mm |
| Length | 6.6mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Packaging | Rail/Tube |
| Rds On Max | 8R |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 170pF |
| Power Dissipation | 45W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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