STD2NK90Z-1
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Краткое описание:
900V N-Channel MOSFET, 2.1A, 6.5R Rds On, IPAK
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 900V drain-source breakdown voltage and 2.1A continuous drain current. Offers a low 6.5 Ohm typical drain-source on-resistance and 70W power dissipation. Designed for through-hole mounting in a TO-251-3 IPAK package. Includes fast switching characteristics with turn-on delay of 21ns and fall time of 40ns. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 6.5R |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 485pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 43ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 6.5R |
| Drain to Source Breakdown Voltage | 900V |
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