STD30NF03LT4
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Краткое описание:
30V 30A N-CH MOSFET DPAK 20mR Power
Дополнительная информация
N-channel Power MOSFET featuring 30V drain-source breakdown voltage and 30A continuous drain current. Offers low 20mΩ typical drain-source on-resistance. Packaged in a TO-252 surface-mount DPAK, this component supports a maximum power dissipation of 50W and operates within a temperature range of -65°C to 175°C. RoHS compliant with a 1.7V threshold voltage.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 240ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | TO-252 |
| Current Rating | 30A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 2500 |
| Input Capacitance | 830pF |
| Power Dissipation | 50W |
| Threshold Voltage | 1.7V |
| Number of Elements | 1 |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 90ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25mR |
| Drain to Source Breakdown Voltage | 30V |
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