STD35NF06T4

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STD35NF06T4 - Stmicroelectronics
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Краткое описание: N-Ch 60V 35A 18mR DPAK Power MOSFET
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 35A continuous drain current. Offers low 18mΩ drain-source on-resistance and 80W maximum power dissipation. Designed for surface mounting in a DPAK package, this component boasts fast switching times with a 16ns turn-on delay and 15ns fall time. Operating temperature range spans from -55°C to 175°C, with RoHS compliance and lead-free construction.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series STripFET™
Polarity N-CHANNEL
Fall Time 15ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 20mR
Package/Case DPAK
Current Rating 35A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 1
Input Capacitance 1.3nF
Power Dissipation 55W
Turn-On Delay Time 16ns
Radiation Hardening No
Turn-Off Delay Time 36ns
Max Power Dissipation 80W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 18mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 35A
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 20mR
Drain to Source Breakdown Voltage 60V

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