STD35NF3LLT4

Снят с производства
STD35NF3LLT4 - Stmicroelectronics
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Краткое описание: 35A, 30V, 19.5mR N-CH MOSFET, DPAK, Power
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-Channel Power MOSFET in a DPAK surface-mount package. Features a 30V drain-source breakdown voltage and a maximum continuous drain current of 35A. Offers a low drain-source on-resistance of 19.5mΩ at a nominal gate-source voltage of 2.5V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 50W. RoHS compliant and supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 6.8mm
Series STripFET™
Polarity N-CHANNEL
Fall Time 21ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 19.5mR
Nominal Vgs 2.5V
Package/Case DPAK
Current Rating 35A
RoHS Compliant Yes
DC Rated Voltage 30V
Package Quantity 2500
Input Capacitance 800pF
Power Dissipation 50W
Threshold Voltage 2.5V
Number of Elements 1
Turn-On Delay Time 17ns
Dual Supply Voltage 30V
Turn-Off Delay Time 20ns
Reach SVHC Compliant No
Max Power Dissipation 50W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 16mR
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 35A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 19.5mR
Drain to Source Breakdown Voltage 30V

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