STD3LN62K3

Снят с производства
STD3LN62K3 - Stmicroelectronics
Увеличить
Краткое описание: 620V 2.5A N-CH MOSFET DPAK, 2.5 Ohm
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

N-channel SuperMESH3™ Power MOSFET in DPAK package, featuring 620V drain-source breakdown voltage and 2.5A continuous drain current. Offers a maximum drain-source on-resistance of 3 Ohms. Includes fast switching characteristics with a 9ns turn-on delay and 27ns fall time. Operates within a temperature range of -55°C to 150°C with 45W power dissipation. This surface-mount component is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series SuperMESH3™
Polarity N-CHANNEL
Fall Time 27ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 3R
Package/Case DPAK
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 386pF
Power Dissipation 45W
Threshold Voltage 3.75V
Turn-On Delay Time 9ns
Radiation Hardening No
Turn-Off Delay Time 30ns
Reach SVHC Compliant No
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.5R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.5A
Drain to Source Voltage (Vdss) 620V
Drain-source On Resistance-Max 3R
Drain to Source Breakdown Voltage 620V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.