STD3N62K3

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STD3N62K3 - Stmicroelectronics
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Краткое описание: 620V N-CH MOSFET 2.7A 2.5R DPAK
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH3™ Power MOSFET, 620V drain-source breakdown voltage, 2.7A continuous drain current, and 2.5 Ohm max drain-source on-resistance. Features a DPAK surface-mount package, 45W power dissipation, and operates from -55°C to 150°C. Includes 385pF input capacitance, 9ns turn-on delay, and 22ns turn-off delay. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 15.6ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 2.5R
Package/Case DPAK
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 385pF
Power Dissipation 45W
Threshold Voltage 3.75V
Turn-On Delay Time 9ns
Radiation Hardening No
Turn-Off Delay Time 22ns
Reach SVHC Compliant No
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.5R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.7A
Drain to Source Voltage (Vdss) 620V
Drain-source On Resistance-Max 2.5R
Drain to Source Breakdown Voltage 620V

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