STD3NK100Z

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STD3NK100Z - Stmicroelectronics
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Краткое описание: 1kV N-CH MOSFET, 2.5A, 6 Ohm, DPAK, SuperMESH
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH™ Power MOSFET, 1000V drain-source breakdown voltage, 2.5A continuous drain current, and 6 Ohm maximum drain-source on-resistance. Features a DPAK surface mount package with dimensions of 6.6mm length, 6.2mm width, and 2.4mm height. Operates from -55°C to 150°C with 90W maximum power dissipation. Includes 32ns fall time, 39ns turn-off delay, and 15ns turn-on delay.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 32ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 6R
Package/Case DPAK
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 601pF
Power Dissipation 90W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 39ns
Reach SVHC Compliant No
Max Power Dissipation 90W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 6R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.5A
Drain to Source Voltage (Vdss) 1kV
Drain-source On Resistance-Max 6R
Drain to Source Breakdown Voltage 1kV

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