STD45N10F7

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STD45N10F7 - Stmicroelectronics
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Краткое описание: N-Ch MOSFET 100V 45A 18mR DPAK Power Transistor
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 100V drain-source breakdown voltage and 45A continuous drain current. This surface-mount device in a DPAK package offers a low 0.013 Ohm typical drain-source on-resistance. Key specifications include a maximum power dissipation of 60W and an operating temperature range of -55°C to 175°C. It boasts fast switching characteristics with an 8ns fall time, 15ns turn-on delay, and 24ns turn-off delay. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series DeepGATE™, STripFET™ VII
Weight 0.139332oz
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 18mR
Package/Case DPAK
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 1.64nF
Number of Channels 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 24ns
Max Power Dissipation 60W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 18mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 45A
Drain to Source Voltage (Vdss) 100V
Drain to Source Breakdown Voltage 100V

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