STD4NS25T4
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Краткое описание:
250V 4A N-CH MOSFET, 1.1Ω RdsOn, TO-252 DPAK
Дополнительная информация
N-channel power MOSFET with 250V drain-source breakdown voltage and 4A continuous drain current. Features 1.1 ohm maximum drain-source on-resistance and 50W maximum power dissipation. Packaged in a TO-252 (DPAK-3) surface-mount package. Operates from -65°C to 150°C with a 20V gate-source voltage rating. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.8mm |
| Series | MESH OVERLAY™ |
| Polarity | N-CHANNEL |
| Fall Time | 10.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.1R |
| Nominal Vgs | 3V |
| Package/Case | TO-252 |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 250V |
| Package Quantity | 1 |
| Input Capacitance | 355pF |
| Power Dissipation | 50W |
| Threshold Voltage | 3V |
| Dual Supply Voltage | 250V |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 900mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain to Source Breakdown Voltage | 250V |
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