STD55N4F5

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STD55N4F5 - Stmicroelectronics
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Краткое описание: 55A 40V 8.5mR N-CH MOSFET DPAK TO-252
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-Channel Power MOSFET, DPAK package, featuring 40V Drain to Source Breakdown Voltage and 55A Continuous Drain Current. Offers a low 8.5mΩ Drain to Source On Resistance. Designed for surface mounting with a maximum power dissipation of 60W and operating temperature range of -55°C to 175°C. Includes fast switching characteristics with a 6ns fall time. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Series STripFET™
Polarity N-CHANNEL
Fall Time 6ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 8.5mR
Package/Case DPAK
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 1.6nF
Power Dissipation 60W
Number of Elements 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 25ns
Max Power Dissipation 60W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 8.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 55A
Drain to Source Voltage (Vdss) 40V
Drain-source On Resistance-Max 8.5MR
Drain to Source Breakdown Voltage 40V

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