STD5N20T4
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Краткое описание:
5A 200V N-CH MOSFET, 800mR, DPAK, Power
Дополнительная информация
N-channel power MOSFET featuring 200V drain-source breakdown voltage and 5A continuous drain current. This surface-mount device offers a maximum drain-source on-resistance of 800mΩ at a nominal gate-source voltage of 3V. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 45W. The component is housed in a DPAK package with SMD/SMT termination.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | MESH OVERLAY™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 800mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 1 |
| Input Capacitance | 350pF |
| Power Dissipation | 45W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Dual Supply Voltage | 200V |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 700mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 800mR |
| Drain to Source Breakdown Voltage | 200V |
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