STD5NK50Z-1
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Краткое описание:
500V 4.4A N-CH MOSFET, 1.5R, TO-251
Дополнительная информация
N-channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 4.4A continuous drain current. Offers 1.5 ohm drain-to-source resistance (Rds On Max) and 70W power dissipation. This through-hole component, housed in a TO-251-3 package, exhibits a 3.75V threshold voltage and fast switching characteristics with 15ns turn-on delay and 15ns fall time. Operating temperature range is -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.2mm |
| Length | 6.6mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Packaging | Rail/Tube |
| Rds On Max | 1.5R |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 535pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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