STD5NM60-1
Производится
Увеличить
Краткое описание:
600V N-CH MOSFET, 1R Rds On, 5A ID, TO-251
Дополнительная информация
N-Channel 600V POWER MOSFET featuring 0.9 Ohm Rds On and 8A current rating. This MDmesh™ series component offers a 600V Drain to Source Breakdown Voltage and 5A continuous drain current. Designed for through-hole mounting in a TO-251 package, it operates from -55°C to 150°C with a maximum power dissipation of 96W. Key switching characteristics include a 10ns fall time, 14ns turn-on delay, and 23ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.2mm |
| Length | 6.6mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1R |
| Package/Case | TO-251 |
| Current Rating | 8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 75 |
| Input Capacitance | 400pF |
| Power Dissipation | 96W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 96W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
