STD60N55F3
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Краткое описание:
N-Ch MOSFET, 55V, 80A, 8.5mR Rds(on), DPAK
Дополнительная информация
N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. Offers low 6.5mOhm typical on-resistance and 8.5mR maximum. Designed for surface mounting in a DPAK package, this component boasts a maximum power dissipation of 110W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 20ns turn-on delay and 11.5ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 11.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.5mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.2nF |
| Power Dissipation | 110W |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8.5MR |
| Drain to Source Breakdown Voltage | 55V |
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