STD6N62K3
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Краткое описание:
620V 1.28R N-CH Power MOSFET DPAK
Дополнительная информация
N-channel SuperMESH3™ Power MOSFET in DPAK package. Features 620V drain-source voltage (Vdss) and 5.5A continuous drain current (ID). Offers a maximum drain-source on-resistance (Rds On) of 1.28 Ohms. Includes a 650V drain to source breakdown voltage and a 90W maximum power dissipation. Operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.28R |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 706pF |
| Power Dissipation | 90W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 49ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.28R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 1.2R |
| Drain to Source Breakdown Voltage | 650V |
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