STD6NF10T4
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Краткое описание:
100V 6A N-CH MOSFET, 220mR RdsOn, TO-252
Дополнительная информация
N-channel STripFET™ MOSFET, 100V drain-source breakdown voltage, 6A continuous drain current, and 250mΩ maximum drain-source on-resistance. Features low gate charge, 4V threshold voltage, and 20ns turn-off delay. Packaged in TO-252 for surface mounting, this RoHS compliant component operates from -65°C to 175°C with 30W maximum power dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 250mR |
| Package/Case | TO-252 |
| Current Rating | 6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1 |
| Input Capacitance | 280pF |
| Power Dissipation | 30W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 220mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 250mR |
| Drain to Source Breakdown Voltage | 100V |
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