STD7NM80-1
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Краткое описание:
800V N-CH MOSFET, 6.5A, 1.05R, IPAK
Дополнительная информация
N-channel power MOSFET featuring 800V drain-source breakdown voltage and 6.5A continuous drain current. Offers 1.05 Ohm drain-source resistance (Rds On Max) and 90W maximum power dissipation. Designed for through-hole and surface mount applications with a TO-251 package. Key switching characteristics include a 20ns turn-on delay and 10ns fall time. Operates within a -55°C to 150°C temperature range and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole, Surface Mount |
| Width | 2.4mm |
| Height | 6.2mm |
| Length | 6.6mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.05R |
| Package/Case | TO-251 |
| RoHS Compliant | Yes |
| Input Capacitance | 620pF |
| Power Dissipation | 90W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.05R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
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