STD7NS20T4
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Краткое описание:
200V 7A N-CH MOSFET, 350mR RdsOn, DPAK
Дополнительная информация
N-channel Power MOSFET featuring 200V drain-source breakdown voltage and 7A continuous drain current. Offers a low 0.35 Ohm typical drain-source on-resistance, with a maximum of 400mR. This surface-mount component is housed in a TO-252 package, ideal for applications requiring efficient power switching. Key switching characteristics include a 10ns turn-on delay and a 12ns fall time, with a maximum power dissipation of 45W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | MESH OVERLAY™ |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 400mR |
| Package/Case | TO-252 |
| Current Rating | 7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 1 |
| Input Capacitance | 540pF |
| Power Dissipation | 45W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 350mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 400mR |
| Drain to Source Breakdown Voltage | 200V |
