STD85N3LH5
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Краткое описание:
80A 30V 5mR N-CH MOSFET DPAK Power Transistor
Дополнительная информация
N-channel power MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. Offers a low 5mΩ drain-source on-resistance and 70W maximum power dissipation. Designed for surface mounting in a DPAK package, this RoHS compliant component operates from -55°C to 175°C. Key switching characteristics include a 6ns turn-on delay and 10.8ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ V |
| Polarity | N-CHANNEL |
| Fall Time | 10.8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.85nF |
| Power Dissipation | 70W |
| Threshold Voltage | 2.5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23.6ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5mR |
| Gate to Source Voltage (Vgs) | 22V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 5mR |
| Drain to Source Breakdown Voltage | 30V |
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