STD95N2LH5
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Краткое описание:
N-Ch MOSFET, 25V, 80A, 4.5mR, DPAK, Power
Дополнительная информация
N-channel Power MOSFET featuring 25V drain-source breakdown voltage and 80A continuous drain current. Offers a low 4.5mΩ maximum drain-source on-resistance. Designed for surface mounting in a DPAK package, this component operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 70W. Key switching characteristics include a 7ns turn-on delay and 22ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.5mR |
| Nominal Vgs | 1V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.817nF |
| Power Dissipation | 70W |
| Turn-On Delay Time | 7ns |
| Dual Supply Voltage | 25V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.5mR |
| Gate to Source Voltage (Vgs) | 22V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 4.5mR |
| Drain to Source Breakdown Voltage | 25V |
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