STD9NM60N

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STD9NM60N - Stmicroelectronics
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Краткое описание: 600V 6.5A N-CH MOSFET DPAK 745mR RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 600V drain-source breakdown voltage and 6.5A continuous drain current. Offers a low 745mΩ maximum drain-source on-resistance. Designed for surface mounting in a DPAK package, this component boasts a 70W maximum power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 26.7ns fall time and 28ns turn-on delay.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series MDmesh™
Polarity N-CHANNEL
Fall Time 26.7ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 745mR
Package/Case DPAK
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 452pF
Power Dissipation 70W
Threshold Voltage 3V
Number of Elements 1
Turn-On Delay Time 28ns
Turn-Off Delay Time 52.5ns
Reach SVHC Compliant No
Max Power Dissipation 70W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 745mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 6.5A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 745mR
Drain to Source Breakdown Voltage 600V

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