STE250NS10

Снят с производства
STE250NS10 - Stmicroelectronics
Увеличить
Краткое описание: 220A 100V 5.5mR N-CH Power MOSFET
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 100V drain-source breakdown voltage and a maximum continuous drain current of 220A. Offers a low 5.5mΩ drain-source on-resistance and 500W power dissipation. Designed for chassis mounting with a screw terminal, this component operates within a temperature range of -55°C to 150°C. Includes a 3V threshold voltage and is RoHS compliant.
RoHS Compliant
Mount Chassis Mount, Screw
Width 25.5mm
Height 9.1mm
Length 38.2mm
Series STripFET™
Polarity N-CHANNEL
Fall Time 300ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 5.5mR
Current Rating 220A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 10
Input Capacitance 31nF
Power Dissipation 500W
Threshold Voltage 3V
Number of Elements 1
Turn-On Delay Time 110ns
Radiation Hardening No
Turn-Off Delay Time 1100ns
Reach SVHC Compliant No
Max Power Dissipation 500W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 5.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 220A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 5.5mR
Drain to Source Breakdown Voltage 100V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.