STE30NK90Z

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STE30NK90Z - Stmicroelectronics
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Краткое описание: 900V 28A N-CH MOSFET, 260mR RdsOn, 500W PD
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 900V drain-source breakdown voltage and 28A continuous drain current. Offers a low 260mΩ maximum drain-source on-resistance. Designed for chassis mounting with a maximum power dissipation of 500W. Operates across a wide temperature range from -65°C to 150°C. RoHS compliant and lead-free.
RoHS Compliant
Mount Chassis Mount, Screw
Width 25.5mm
Height 9.1mm
Length 38.2mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 72ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 260mR
Current Rating 30A
RoHS Compliant Yes
DC Rated Voltage 900V
Package Quantity 10
Input Capacitance 12nF
Power Dissipation 500W
Turn-On Delay Time 67ns
Radiation Hardening No
Turn-Off Delay Time 250ns
Max Power Dissipation 500W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Drain to Source Resistance 210mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 28A
Drain to Source Voltage (Vdss) 900V
Drain-source On Resistance-Max 260mR
Drain to Source Breakdown Voltage 900V

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