STE40NC60
Производится
Увеличить
Краткое описание:
600V 40A N-CH MOSFET, 130mR RdsOn, 460W PD
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 40A continuous drain current. This device offers a low 130mΩ maximum drain-source on-resistance and 460W maximum power dissipation. Designed for chassis or panel mounting with screw terminals, it operates from -65°C to 150°C and includes fast switching characteristics with a 26ns fall time. RoHS compliant and lead-free, this MOSFET is suitable for high-power applications.
| RoHS | Compliant |
| Mount | Chassis Mount, Panel, Screw |
| Width | 25.5mm |
| Height | 9.1mm |
| Length | 38.2mm |
| Series | PowerMESH™ II |
| Polarity | N-CHANNEL |
| Fall Time | 26ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 130mR |
| Current Rating | 40A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 10 |
| Input Capacitance | 11.1nF |
| Isolation Voltage | 2.5kV |
| Power Dissipation | 460W |
| Number of Elements | 1 |
| Turn-On Delay Time | 49ns |
| On-State Resistance | 135mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 41ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 460W |
| Reverse Recovery Time | 685ns |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 130mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 130mR |
| Drain to Source Breakdown Voltage | 600V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
