STE48NM50
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Краткое описание:
500V 48A N-Channel MOSFET, 100mR RdsOn
Дополнительная информация
N-Channel MOSFET featuring 500V drain-source breakdown voltage and 48A continuous drain current. Offers a low 100mΩ drain-source on-resistance and 450W maximum power dissipation. Ideal for high-power applications with fast switching characteristics, including 40ns turn-on and 23ns fall times. Supports chassis, surface, and screw mounting with a 150°C maximum operating temperature.
| RoHS | Compliant |
| Mount | Chassis Mount, Surface Mount, Screw |
| Width | 25.5mm |
| Height | 12.2mm |
| Length | 38.2mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 23ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 100mR |
| Current Rating | 48A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 550V |
| Package Quantity | 10 |
| Input Capacitance | 3.7nF |
| Power Dissipation | 450W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 40ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 450W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 48A |
| Drain to Source Voltage (Vdss) | 550V |
| Drain-source On Resistance-Max | 100mR |
| Drain to Source Breakdown Voltage | 500V |
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