STF10N62K3
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Краткое описание:
620V N-CH MOSFET, 8.4A, 680mR, TO-220FP
Дополнительная информация
N-channel SuperMESH3™ Power MOSFET, 620V drain-source breakdown voltage, 8.4A continuous drain current, and 0.68 Ohm typical drain-source resistance. Features include a 30V gate-source voltage, 150°C max operating temperature, and 30W power dissipation. This through-hole component is housed in a TO-220-3 package, offering fast switching with turn-on delay of 14.5ns and fall time of 31ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 31ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 750mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 1.25nF |
| Power Dissipation | 30W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 14.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 41ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 680mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 8.4A |
| Drain to Source Voltage (Vdss) | 620V |
| Drain to Source Breakdown Voltage | 620V |
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