STF10NM50N
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Краткое описание:
500V 7A N-CH MOSFET, 630mR Rds On, TO-220
Дополнительная информация
N-channel power MOSFET featuring 500V drain-source breakdown voltage and 7A continuous drain current. Offers a low 630mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, this component boasts fast switching speeds with typical turn-on and turn-off delay times of 7.8ns and a fall time of 12ns. Maximum power dissipation is rated at 25W, with an operating temperature range of -55°C to 150°C. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 630mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 450pF |
| Power Dissipation | 25W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 7.8ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 630mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 630MR |
| Drain to Source Breakdown Voltage | 500V |
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