STF13N60M2

Производится
STF13N60M2 - Stmicroelectronics
Увеличить
Краткое описание: 600V 11A N-CH MOSFET TO-220FP 380mR
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. Offers 380mΩ typical drain-source resistance and 25W power dissipation. Designed for through-hole mounting in a TO-220FP package, with fast switching characteristics including 9.5ns fall time and 11ns turn-on delay. Operates across a wide temperature range from -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series MDmesh™ II Plus
Polarity N-CHANNEL
Fall Time 9.5ns
Packaging Rail/Tube
Rds On Max 380mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 580pF
Power Dissipation 25W
Number of Elements 1
Turn-On Delay Time 11ns
Radiation Hardening No
Turn-Off Delay Time 41ns
Max Power Dissipation 25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 380mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 11A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 650V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.