STF18NM60N

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STF18NM60N - Stmicroelectronics
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Краткое описание: 600V N-CH MOSFET, 13A, 260mR, TO-220FP
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source voltage and 13A continuous drain current. Offers low 260mΩ typical drain-source on-resistance and 285mΩ maximum. Operates within a -55°C to 150°C temperature range with 30W power dissipation. Packaged in TO-220-3 for through-hole mounting, this RoHS compliant component is ideal for high-voltage switching applications.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series MDmesh™ II
Polarity N-CHANNEL
Fall Time 40ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 285mR
Package/Case TO-220-3
RoHS Compliant Yes
Input Capacitance 1nF
Power Dissipation 30W
Threshold Voltage 3V
Turn-On Delay Time 12ns
Radiation Hardening No
Turn-Off Delay Time 50ns
Reach SVHC Compliant No
Max Power Dissipation 30W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 260mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 13A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 285MR
Drain to Source Breakdown Voltage 650V

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