STF21NM60ND
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Краткое описание:
600V N-CH MOSFET, 17A, 220mR, TO-220FP, Fast Diode
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 17A continuous drain current. This component offers a typical on-resistance of 0.17 Ohms and is housed in a TO-220FP package for through-hole mounting. Key performance characteristics include a 4V threshold voltage, 1.8nF input capacitance, and fast switching times with a 18ns turn-on delay and 48ns fall time. Maximum power dissipation is rated at 30W, with operating temperatures ranging from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | FDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 48ns |
| Packaging | Rail/Tube |
| Rds On Max | 220mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.8nF |
| Power Dissipation | 30W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 220mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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