STF23NM60ND

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STF23NM60ND - Stmicroelectronics
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Краткое описание: 600V 19.5A N-CH MOSFET TO-220FP 180mR
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 19.5A continuous drain current. This TO-220FP packaged device offers a low 180mΩ Rds(on) and includes a fast diode. Key switching characteristics include a 21ns turn-on delay and 40ns fall time. Maximum power dissipation is 35W with an operating temperature range of -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series FDmesh™ II
Polarity N-CHANNEL
Fall Time 40ns
Packaging Rail/Tube
Rds On Max 180mR
Package/Case TO-220-3
RoHS Compliant Yes
Input Capacitance 2.05nF
Power Dissipation 35W
Threshold Voltage 4V
Turn-On Delay Time 21ns
Radiation Hardening No
Turn-Off Delay Time 90ns
Reach SVHC Compliant No
Max Power Dissipation 35W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 180mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 19.5A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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