STF24NM60N

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STF24NM60N - Stmicroelectronics
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Краткое описание: 600V 17A N-CH MOSFET TO-220FP, 190mR Rds(on)
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 17A continuous drain current. Offers a low 190mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, this device boasts a 30W power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 11.5ns turn-on delay and 37ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series MDmesh™ II
Polarity N-CHANNEL
Fall Time 37ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 190mR
Package/Case TO-220-3
RoHS Compliant Yes
Input Capacitance 1.4nF
Power Dissipation 30W
Threshold Voltage 3V
Turn-On Delay Time 11.5ns
Radiation Hardening No
Turn-Off Delay Time 73ns
Reach SVHC Compliant No
Max Power Dissipation 30W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 190mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 17A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 190MR
Drain to Source Breakdown Voltage 600V

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