N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 22A continuous drain current. Offers a low 148mΩ maximum drain-source on-resistance. Housed in a TO-220-3 through-hole package, this component operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 30W. Includes 816pF input capacitance and 46ns turn-on/off delay times.
| RoHS |
Compliant |
| Mount |
Through Hole |
| Width |
4.6mm |
| Height |
16.4mm |
| Length |
10.4mm |
| Series |
MDmesh™ V |
| Polarity |
N-CHANNEL |
| Lead Free |
Lead Free |
| Packaging |
Rail/Tube |
| Rds On Max |
148mR |
| Package/Case |
TO-220-3 |
| RoHS Compliant |
Yes |
| Package Quantity |
50 |
| Input Capacitance |
816pF |
| Power Dissipation |
30W |
| Number of Elements |
1 |
| Turn-On Delay Time |
46ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
46ns |
| Max Power Dissipation |
30W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
148mR |
| Gate to Source Voltage (Vgs) |
25V |
| Continuous Drain Current (ID) |
22A |
| Drain to Source Voltage (Vdss) |
650V |
| Drain-source On Resistance-Max |
148mR |
| Drain to Source Breakdown Voltage |
650V |