STF34NM60N

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STF34NM60N - Stmicroelectronics
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Краткое описание: 600V 29A N-CH MOSFET, 105mR, TO-220-3
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-Channel Power MOSFET, TO-220-3 package. Features 600V drain-source breakdown voltage, 29A continuous drain current, and a maximum drain-source on-resistance of 105mΩ. Operates with a gate-source voltage up to 25V and a threshold voltage of 3V. Offers fast switching characteristics with a 17ns turn-on delay and 70ns fall time. Maximum power dissipation is 40W, with an operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series MDmesh™ II
Polarity N-CHANNEL
Fall Time 70ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 105mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 2.722nF
Power Dissipation 40W
Threshold Voltage 3V
Turn-On Delay Time 17ns
Radiation Hardening No
Turn-Off Delay Time 106ns
Reach SVHC Compliant No
Max Power Dissipation 40W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 105mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 29A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 105MR
Drain to Source Breakdown Voltage 600V

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